发明名称 |
SEMICONDUCTOR DEVICE, POWER SUPPLY DEVICE, AND INFORMATION PROCESSING DEVICE |
摘要 |
<p>A semiconductor device (100) includes a MOS transistor (10) having a back gate region "a", a first region "b" serving as one of a source region and a drain region, and a second region "c" serving as the other of the source region and the drain region. The semiconductor device further includes an input terminal (20) connected to the first region "b" and to which an input voltage is applied from outside the semiconductor device (100), an output terminal (30) connected to the second region "c" and outputting an output voltage outside the semiconductor device (100), and a back gate control circuit (40) for applying the input voltage or the output voltage to the back gate region "a". With this configuration of the semiconductor device having the output MOS transistor, even when a reverse bias is applied between the input and the output terminal, the terminals are insulated from each other and lowering of the drain current by the substrate bias effect can be suppressed.</p> |
申请公布号 |
WO2006135062(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
WO2006JP312167 |
申请日期 |
2006.06.16 |
申请人 |
UMEMOTO, KIYOTAKA;ROHM CO., LTD. |
发明人 |
UMEMOTO, KIYOTAKA |
分类号 |
H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H02M3/155 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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