| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a one layer gate type nonvolatile memory element having a novel structure. SOLUTION: The semiconductor device comprises an isolation insulating layer 20 provided on a semiconductor layer 10 while including a first region 10C, a second region 10A adjacent to the first region 10C, and a third region 10B adjacent to the second region 10A and defining a region for forming a nonvolatile memory element C100, a first diffusion layer 14 formed in the first region 10C, a second diffusion layer 16 formed in a first source region and a first drain region 38 which are formed on the first diffusion layer 14 and around the first diffusion layer 14 and in the second region 10A while spaced apart from the first diffusion layer 14, a third diffusion layer 12 formed in the third region 10B, a first insulation layer 30 formed in a second source region and a second drain region 34 which are formed on the third diffusion layer 12 and on the semiconductor layer 10, and a first conductive layer 32 provided on the first insulation layer 30. COPYRIGHT: (C)2007,JPO&INPIT
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