| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which junction leakage is prevented from occurring by restraining silicidation at the end of an element isolation insulating film. SOLUTION: The semiconductor device comprises an element isolation insulating film 3 formed on a semiconductor substrate 1 for partitioning an active region, a gate electrode 5 formed via a gate insulating film 4 on the semiconductor substrate 1 in the active region, side wall insulating films 6 formed on both sides of the gate electrode 5, source-drain regions 8 formed on the semiconductor substrate 1 on both the sides of the gate electrode 5, a silicide layer 10 formed on a surface layer of the source-drain region 8, and a first insulating film 21 formed so as to embed a recessed part 3a formed in the end of the element isolation insulating film for preventing the silicidation of the semiconductor substrate 1 at the end. COPYRIGHT: (C)2007,JPO&INPIT
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