| 摘要 |
PROBLEM TO BE SOLVED: To form an SOI structure and a bulk structure on the same substrate while suppressing increase in number of steps and to perform isolation stably. SOLUTION: A trench 37 for separating an SOI forming region R21 and a bulk region R22 is formed by patterning a support layer 36, a pad oxide film 35, a second semiconductor layer 34 and a first semiconductor layer 33. A cavity 40 is formed between the semiconductor substrate 31 and the second semiconductor layer 34 in the SOI forming region R21 by touching etching gas or etching liquid to the first semiconductor layer 33 through the trench 37. Subsequently, thermal oxidation of the semiconductor substrate 31 and the second semiconductor layer 34 is performed thus forming a buried insulation layer 41 in the cavity 40 between the semiconductor substrate 31 and the second semiconductor layer 34. COPYRIGHT: (C)2007,JPO&INPIT
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