| 发明名称 |
Method for growing silicon single crystal |
| 摘要 |
A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.
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| 申请公布号 |
US2006283373(A1) |
申请公布日期 |
2006.12.21 |
| 申请号 |
US20060390366 |
申请日期 |
2006.03.28 |
| 申请人 |
SUMCO CORPORATION |
发明人 |
INAMI SHUICHI;TAKASE NOBUMITSU;KOGURE YASUHIRO;HAMADA KEN;NAKAMURA TSUYOSHI |
| 分类号 |
C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
| 代理机构 |
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| 主权项 |
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