METAL LINE AND METHOD FOR FORMING THE SAME

摘要

A metal line and a forming method thereof are provided to control stably the limitation of CD(Critical Dimension) in the metal line itself by preventing the generation of footing in a photo process using a different density of nitrogen components according to the thickness of a deposited titanium nitride layer. A metal film structure(113) is formed on a substrate. The metal film structure includes a titanium nitride layer(111a). A photoresist layer is coated on the metal film structure. A photoresist pattern is formed on the resultant structure by exposing and developing the photoresist layer. The metal film structure is selectively etched by using the photoresist pattern as an etch mask. The titanium nitride layer is formed at an upper portion of the metal film structure. The nitrogen density of an upper portion is smaller than that of a lower portion in the titanium layer.