| 摘要 |
A method for forming a semiconductor device is provided to prevent semiconductor device failure due to short circuit between electrodes by forming an inter-metal dielectric layer without voids. A metal layer(13) is formed on a semiconductor substrate(10). A hard mask layer pattern is formed on a predetermined region of the metal layer. A plurality of metal layer patterns(15) are formed by performing a metal layer patterning process using the hard mask pattern as an etch mask. Edges of the metal layer patterns are exposed by removing an edge part of the hard mask pattern. An inter-metal dielectric layer(16) is formed on an entire surface of the semiconductor substrate. The metal layer patterns are exposed by planarizing and removing the inter-metal dielectric layer and the hard mask layer pattern.
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