| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an equipment and a method for inspecting a semiconductor with high accuracy and efficiency. SOLUTION: The substrate stage 28 of an EB inspection equipment 1 is sequentially applied with a plurality of DC voltages having different voltage levels from a variable DC power supply 42. The same area of a semiconductor substrate S is scanned with a charge beam 32 for each DC voltage being applied to a substrate and a signal having an intensity dependent on the surface potential of a semiconductor substrate S is acquired through a secondary electron detector 44. Intensity difference between different DC voltages applied to the substrate is then calculated for the signals thus acquired and a decision is made that a part corresponding to a signal having a large intensity difference is acceptable and a part corresponding to a signal having a small intensity difference is rejectable.</p> |
