| 摘要 |
A light emitting device growing substrate, a light emitting device with a three-dimensional structure grown on the same and a manufacturing method thereof are provided to increase a light emissive area by using a plurality of semiconductor structures. A light emitting device growing substrate comprises a support plate, a mask layer, and a plurality of semiconductor structures. The mask layer(120) is formed on the support plate. The mask layer includes a plurality of opening portions spaced apart from each other. The plurality of semiconductor structures(131) are formed on the support plate through the opening portions, respectively. Each semiconductor structure is formed like a three-dimensional structure. The semiconductor structure has a polarity.
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