| 摘要 |
FIELD: production of thin plane-parallel wafers from fragile crystalline materials; manufacture of microelectronic devices. ^ SUBSTANCE: proposed method that can be used for manufacturing semiconductor-on-insulator devices and producing submicron depressions of various geometric shapes includes irradiation of wafers with gas atom ions; in the course of irradiation with ions of one type of has atoms wafer is sequentially and/or periodically implanted with ions accelerated to different energies; irradiation is conducted with hydrogen ions. As an alternative, proposed method can include radiation-induced gas spalling of wafer with gas atom ions; in the course of irradiation with ions of one type of gas atoms wafer is sequentially and/or periodically inclined through desired angle relative to incident ion beam; angle of inclination is evaluated from calculated distance between damage and dope profile maximums for desired parameters of material, type and energy of ions. ^ EFFECT: enhanced efficiency of spalling by reduced doping dosing in single-component irradiation with hydrogen ions due to combining energy profiles of damage and doping. ^ 4 cl, 2 dwg, 2 ex |
