| 摘要 |
A method for fabricating a semiconductor device is provided to increase the reliability of devices by forming an isolation layer without a damage using a buffer insulating layer. A buffer silicon oxide layer and a buffer silicon nitride layer(32) are sequentially formed on a substrate(30). A trench for isolating is formed in the substrate by selectively etching the buffer silicon oxide and nitride layer. A first insulating layer with a predetermined thickness is formed at the top corners of the trench. Then, a second insulating layer with a relatively high etching selectivity compared to the first insulating layer is filled in the trench. The second and the first insulating layers are eliminated by wet-etching.
|
