| 摘要 |
PROBLEM TO BE SOLVED: To provide a lead frame for semiconductor devices whereby the defects of a semiconductor device can be prevented which are caused by the difference between the thermal expansion coefficients of its lead-frame base material and its sealing resin. SOLUTION: The lead frame for semiconductor devices has a stage for mounting thereon a semiconductor chip, an inner lead connected with the stage, and an outer lead connected with the inner lead. Also, in the lead frame for semiconductor devices, there are formed on a base material B constituting the lead frame sequentially from its surface (1) a nickel (Ni) layer 1; (2) a palladium (Pd) or palladium alloy layer 2; (3) a tin (Sn) or tin alloy layer, or a zinc (Zn) or zinc alloy layer 3, 3a, 3b; and (4) gold (Au) layers 4, 4a, 4b. COPYRIGHT: (C)2007,JPO&INPIT
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