PROCESS FOR PRODUCING STRAINED Si-SOI SUBSTRATE AND STRAINED Si-SOI SUBSTRATE PRODUCED BY THAT METHOD

摘要

PROBLEM TO BE SOLVED: To provide a strained Si-SOI substrate having flat surface in which defects are suppressed, and to provide its production process. SOLUTION: The process for producing a strained Si-SOI substrate comprises a step for growing an SiGe mixed crystal layer 14 on an SOI substrate 10 having an Si layer 13 and a buried oxide film 12, a step for forming protection films 15 and 16 on the surface of the SiGe mixed crystal layer 14, a step for implanting ions of light element into the vicinity of interface between the Si layer 13 and the buried oxide film 12, a first heat treatment step performing heat treatment at 400-1,000°C, a second heat treatment step performing heat treatment in oxidizing atmosphere at 1,050°C or above, a third heat treatment step performing heat treatment in inactive atmosphere at 1,050°C or above, a step for removing an Si oxide film 18 on the surface, and a step for forming a strained Si layer 19. COPYRIGHT: (C)2007,JPO&INPIT