| 摘要 |
PROBLEM TO BE SOLVED: To more precisely form an emitter region in a bipolar transistor where a base layer is formed on an upper face of a semiconductor substrate on which a first insulating layer having an opening is arranged with non-selection epitaxial growth. SOLUTION: A second insulating layer is laminated on the upper face of the base layer, and the second insulating layer is etched. Thus, the base layer is exposed while a side wall is formed in the opening, and a base-emitter bonding face is formed in terms of self-matching. A first insulating layer is formed by laminating a lower insulating film, a semiconductor film which is conducted with the base layer, and an upper insulating film. The second insulating layer is etched in two stages. The base layer on the first insulating layer is exposed, and the base layer is removed by etching in etching of the first stage. Then, etching in the second stage is performed and the base-emitter bonding face is formed. COPYRIGHT: (C)2007,JPO&INPIT
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