发明名称 |
ATOMIC LAYER VAPOR DEPOSITION APPARATUS UTILIZING NEUTRAL BEAM AND ATOMIC LAYER VAPOR DEPOSITION METHOD UTILIZING THE APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a neutral-beam-utilizing atomic layer vapor deposition apparatus wherein a workpiece is irradiated with a neutral beam formed by neutralizing a radical flux, i.e., an ion beam, generated by converting a second gas into a plasma, and to provide an atomic layer vapor deposition method utilizing the apparatus. SOLUTION: The vapor deposition method utilizing the neutral beam vapor deposition apparatus comprises the step of feeding a first reaction gas containing a substance incapable of being chemisorbed by a workpiece into a reaction chamber loaded with the workpiece to form a first reaction product adsorption layer containing the not chemisorbable substance on the workpiece by adsorption and the step of irradiating the workpiece on which the first reaction product adsorption layer is formed with a neutral beam generated from a second reaction gas to remove a substance not chemisorbed by the workpiece from the first reaction product adsorption layer and to form the second reaction product adsorption layer. By utilizing the neutral-beam-utilizing atomic layer vapor deposition apparatus and the atomic layer vapor deposition method utilizing the apparatus, it is possible to practice the steps without damages due to charging. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2006265724(A) |
申请公布日期 |
2006.10.05 |
申请号 |
JP20060027507 |
申请日期 |
2006.02.03 |
申请人 |
SUNGKYUNKWAN UNIV FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
YEOM GEUN-YOUNG;DO-HAING LEE;BYOUNG-JAE PARK;AHN KYEONG-JOON |
分类号 |
C23C16/455;H01L21/205;H01L21/283;H01L21/285;H01L21/31;H01L21/316 |
主分类号 |
C23C16/455 |
代理机构 |
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