| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the deterioration of an NBTI service life accompanied by the microfabrication of a semiconductor element in recent years. <P>SOLUTION: A silicon nitride film with Si-H joint of 1×10<SP>21</SP>cm<SP>-3</SP>or less is used at least as a liner film or a second side wall insulating film. Thus, the NBTI service life of a p-type MOSFET can be improved by 1×10<SP>9</SP>sec, and the service life of a semiconductor integrated circuit device can be ensured. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2006269673(A) |
申请公布日期 |
2006.10.05 |
| 申请号 |
JP20050084603 |
申请日期 |
2005.03.23 |
| 申请人 |
NEC ELECTRONICS CORP;RENESAS TECHNOLOGY CORP |
发明人 |
MATSUKI TAKEO;TORII KAZUNARI |
| 分类号 |
H01L29/78;H01L21/28;H01L21/318;H01L21/768;H01L21/8234;H01L23/522;H01L27/088;H01L29/417;H01L29/423;H01L29/49 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
