发明名称 GRAY TONE MASK AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a gray tone mask provided with accurate marks related to a gate electrode, a contact hole and the like and formed so as to have an overlapping part of a device pattern formed by using the gray tone mask and a device pattern formed by using an another photo mask. <P>SOLUTION: The gray tone mask has a mask pattern which corresponds to a first device pattern 30 and whose region on the gray tone mask 20 corresponding to the overlapping part of the first device pattern 30 and a second device pattern is a translucent part, and a mark pattern 31 formed simultaneously with formation of the translucent part of the mask pattern and related to the second device pattern. The mask pattern and the mark pattern 31 are used for manufacturing a substrate to be transferred having the first device pattern 30 formed by using the gray tone mask 20 and the second device pattern e.g. the contact hole H etc. formed by using an another photo mask so as to have the overlapping part with the first device pattern 30. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006267262(A) 申请公布日期 2006.10.05
申请号 JP20050082500 申请日期 2005.03.22
申请人 HOYA CORP 发明人 SANO MICHIAKI
分类号 G02F1/1368;G03F1/54;G03F1/68;H01L21/027 主分类号 G02F1/1368
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