| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method capable of changing polishing characteristics through the revision of the concentration of an oxidizing agent only in a process for polishing metallic wires made of copper and an alloy whose principal constituent is copper or the like in a semiconductor wire manufacturing process, resulting in that high flatness is realized and the metallic wires can efficiently be finished with high quality while leaving the supply system of polishing liquid simple, that is; to provide the polishing method capable of controlling a polishing speed and the flatness characteristic by changing only the concentration of the oxidizing agent, without the need for changing the compositions other than that of the oxidizing agent of the metal polishing liquid. <P>SOLUTION: The chemical mechanical polishing method employs processes for applying chemical mechanical polishing to a face to be polished by using the metal polishing liquid including the oxidizing agent over a plurality of process stages, and uses the metallic polishing liquids different from only the concentration of the oxidizing agent with each other at a process speed satisfying formula 1: R<SB>n-1</SB>>R<SB>n</SB>, wherein R<SB>n</SB>is a polishing speed of the face to be polished at n-th stage, R<SB>n-1</SB>is a polishing speed of the face to be polished at (n-1)-th stage, and n is an integer of 2 or over. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
