发明名称 |
Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same |
摘要 |
A semiconductor device includes a substrate, a buffer layer that is formed with an aluminum nitride layer on the substrate and has a film thickness of 5 nm to 40 nm, an operating layer that is formed with a gallium nitride-based semiconductor on the buffer layer, and a control electrode that is formed on the operating layer.
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申请公布号 |
US2006220039(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20060391288 |
申请日期 |
2006.03.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
YOKOYAMA MITSUNORI;IMANISHI KENJI;KIKKAWA TOSHIHIDE |
分类号 |
H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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