SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND SUBSTRATE FOR SEMICONDUCTOR GROWTH

摘要

PROBLEM TO BE SOLVED: To provide HEMT which has a small contact resistance between a source and a drain electrode and 2DEG (two-dimensional electron gas) and has a large electron density for 2DEG, by depositing an electron supplying layer and an electron traveling layer in a [000-1] direction. SOLUTION: The semiconductor device comprises the AlGaN electron supplying layer (32) whose thickness direction with respect to the surface of a substrate (30) is the [000-1] direction, the GaN electron traveling layer (34) formed on the electron supplying layer, a gate electrode (40) formed on the electron traveling layer, and the source electrode (42) and the drain electrode (44) which are formed on the electron traveling layer with the gate electrode in-between. COPYRIGHT: (C)2007,JPO&INPIT