发明名称 PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To inspect the characteristics of a semiconductor element without performing FIB. SOLUTION: The process for fabricating a semiconductor device comprises a step for fabricating a semiconductor device in a semiconductor substrate for product, and a step for fabricating a semiconductor device for monitor in a semiconductor substrate 11 for monitor and inspecting the electrical characteristics of the semiconductor device for monitor. The process for inspecting the electrical characteristics of the semiconductor device for monitor comprises a step for forming an insulating film 20 on the semiconductor element for monitor, a step for forming second contact holes 20d, 20e and 20f arranged in the insulating film 20 in a layout different from that of the semiconductor device and located on the semiconductor element for monitor, a step for forming electrodes 22d, 22e and 22f on the insulating film 20 being connected with the semiconductor element for monitor through the second contact holes 20d, 20e and 20f, and a step for connecting the electrodes 22d, 22e and 22f with an inspection terminal and inputting a signal. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006269479(A) 申请公布日期 2006.10.05
申请号 JP20050081199 申请日期 2005.03.22
申请人 SEIKO EPSON CORP 发明人 YAMADA TOMOHIRO;MIURA MASASHI
分类号 H01L21/66;H01L21/3205;H01L23/52 主分类号 H01L21/66
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