发明名称 |
Shallow trench isolation formation |
摘要 |
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.
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申请公布号 |
US2006220148(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20060445786 |
申请日期 |
2006.06.02 |
申请人 |
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发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;KOBURGER CHARLES W.III |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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