| 摘要 |
A method of cleaning a semiconductor wafer, including the steps of supplying a mixed solution of a dilute hydrofluoric acid solution and hydrogen peroxide solution to a bath; loading the semiconductor wafer into the bath such that the semiconductor wafer is dipped into the mixed solution, and rinsing the semiconductor wafer with the mixed solution; draining the mixed solution and supplying deionized water to the bath, and rinsing the semiconductor wafer with the deionized water; and draining the deionized water and supplying isopropyl alcohol to the bath, and drying the semiconductor wafer with isopropyl alcohol.
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