Single transistor floating body DRAM cell having recess channel transistor structure and method of fabricating the same

摘要

Single transistor floating body dynamic random access memory (DRAM) cells include a semiconductor substrate and a barrier layer on the semiconductor substrate and a recess channel transistor on the barrier layer. The recess channel transistor includes a source region of a first conductivity type, a drain region of the first conductivity type spaced apart from the source region and a floating body of a second conductivity type between the barrier layer and the source region and the drain region. The floating body includes a recess region between the source region and the drain region. Methods of forming single transistor floating body dynamic random access memory (DRAM) cells are also provided.