Manufacturing method of semiconductor device improved in profile of metal silicide film,申请号KR20000054871-传众专利搜索

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发明名称	Manufacturing method of semiconductor device improved in profile of metal silicide film
摘要
申请公布号	KR100618806(B1)	申请公布日期	2006.08.31
申请号	KR20000054871	申请日期	2000.09.19
申请人		发明人
分类号	H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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