| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a (group Mn-V) co-added group IV magnetic semiconductor whose spin polarized carrier density near the Fermi surface can be increased, whose Curie temperature is high, and which is preferably applied as a basic material for spin electronics. <P>SOLUTION: Both of Mn and group V element are co-added to a group IV semiconductor. For example, each of Mn and N is added to 3C-SiC by 25%. P is also suitable for group V element. The manufacture of this semiconductor may be carried out according to a suitable method e. g. an epitaxial growth method such as molecular beam epitaxy, or a method for implanting accelerated ions into an n-type SiC substrate, etc. The state density has a characteristic as shown in Fig. 2, and it is seen from the 0-point (Fermi surface) of the horizontal axis that the state density is metallic in majority-spin and semiconductor-like and half-metallic in minority-spin. The added Mn exhibits magnetism, and co-added N makes physical properties appropriate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
