| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a reduced variation of transmission voltage in two-way transmission. <P>SOLUTION: The semiconductor device comprises a wiring board 10 including a wiring area 10b and a chip mounting area 10a; a semiconductor chip 1 mounted on the chip mounting area 10a and including, on the surface thereof, a pair of high speed transmission electrode pads 31 for transmitting a signal to a high speed transmission circuit; a pair of high speed transmission wiring patterns 11 provided on the wiring area 10b for transmitting a signal to the high speed transmission circuit; a high speed transmission bonding wire 20 for electrically connecting the high speed transmission electrode pads 31 and the high speed transmission wiring patterns 11; and an external connection terminal 23 provided on the wiring board 10 and electrically connected with the high speed transmission wiring patterns 11, compensation inductance Lw for compensating parasitic capacitance Cp of the high speed transmission electrode pads 31 being added to the high speed transmission bonding wire 20, and compensation capacitance Cc for compensating parasitic capacitance Cp being added to the high speed transmission wiring patterns 11 located to the side of the external connection terminal 23 from a portion where the Lw is added. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
