| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist undercoat-forming material having further excellent etching durability than polyhydroxystyrene or cresol novolac which is effective as an undercoat for a two-layer or three-layer resist process, and to provide a pattern forming method using the material. <P>SOLUTION: The photoresist undercoat-forming material contains fullerenes having a 6-16C aryl group which may have a phenolic hydroxyl group, expressed by general formula (1). In general formula (1), R<SP>1</SP>represents a hydrogen atom or an alkyl group; each of R<SP>2</SP>, R<SP>3</SP>, R<SP>4</SP>, R<SP>5</SP>and R<SP>6</SP>represents an aryl group which may have an ether group; and each of a, b, c, d and e is an integer of 0 to 2 satisfying 0≤a+b+c+d+e≤10. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
