SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To simplify a step required for working of a wiring in forming multylayer wirings. SOLUTION: Openings are formed by repeatedly irradiating an insulating film having translucency with a laser beam of high strength and high frequency. Not one opening having a large contact area is provided, but a plurality of openings having minute contact areas are provided, to make a thickness of wiring uniform by reducing a partial recess and secure a contact resistance. COPYRIGHT: (C)2006,JPO&NCIPI