NONVOLATILE MEMORY ELEMENT EQUIPPED WITH A PLURALITY OF TRAP FILMS

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory element equipped with a plurality of trap films. SOLUTION: This non-volatile memory element 200 is provided with a tunnel insulating film 220 formed on a semiconductor substrate 205, a storage node 250 formed on the tunnel insulating film 220, a blocking insulating film 260 formed on the storage node 250 and a control gate electrode 270 formed on the blocking insulating film 260. The storage node 250 is provided with at least two layer trap films 230 and 240 whose trap density is different, and the blocking insulating film 260 is provided with a dielectric constant which is higher than that of an oxidation silicon film. COPYRIGHT: (C)2006,JPO&NCIPI