| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistive memory element capable of controlling switch driving voltage and current by including a memory part and a resistor part for controlling a switching window, allowed to be used as a WORM (write only read memory) type memory and having excellent operation reliability. SOLUTION: The resistive memory element includes the memory part formed by a lower electrode 10, a resistance memory layer 20 and an upper electrode 30, and the resistor part 50 for controlling the switching window of the memory part. COPYRIGHT: (C)2006,JPO&NCIPI
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