| 摘要 |
PROBLEM TO BE SOLVED: To provide a coating solution for insulating film formation, which completely fills even a very small groove, enables thick coating for sufficiently flattening difference in a base level, achieves sufficient uniform flatness over the entire base pattern, contains no water to have a small dielectric constant, enables an insulating film with excellent film characteristics to be formed, and uses siloxanes etc., and a method for forming the insulating film for a semiconductor device. SOLUTION: The coating solution for forming an insulating film used in production of a semiconductor devices includes siloxanes containing Si atoms bonded to at least one kind of organic substituent, and the content rate X found from an integral value of a signal of<SP>29</SP>Si-NMR spectrum of siloxanes satisfies a designated formula, the coating solution for forming the insulating film having a self-fluidization temperature of 150 to 300°C; and the method for forming the insulating film for the semiconductor device using the same is provided. COPYRIGHT: (C)2006,JPO&NCIPI
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