| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of improving the quality of a barrier layer which embeds quantum dots, and to provide its manufacturing method. SOLUTION: The optical semiconductor device comprises an InP substrate (a semiconductor substrate) 10; an underlayer 13 consisting of In<SB>x</SB>Al<SB>y</SB>Ga<SB>1-x-y</SB>As (0≤x, y≤1) formed on the InP substrate 10, a quantum dot 14 consisting of mixed crystal which contains As (arsenic), and a group-III element at least formed on the underlayer 13; a first barrier layer 15 consisting of In<SB>p</SB>Ga<SB>1-p</SB>As<SB>q</SB>P<SB>1-q</SB>(0≤p, q≤1), formed on the quantum dot 14 which has the thickness for covering the top of the quantum dot 14; and a second barrier layer 16, consisting of In<SB>r</SB>Al<SB>s</SB>Ga<SB>1-r-s</SB>As (0≤r, s≤1) formed on the first barrier layer 15. COPYRIGHT: (C)2006,JPO&NCIPI
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