SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING THE SAME

摘要

A nonvolatile semiconductor memory comprises a first decoder that includes a pull-up transistor for selecting and driving a word line connected to memory cells; a first voltage generating circuit that generates a first voltage to be applied to the source terminal of the pull-up transistor; a second voltage generating circuit that generates a second voltage, higher than the first voltage, to be applied to the gate terminal of the pull-up transistor; vertical word lines each of which connects a plurality of sectors in the vertical direction and supplies the first voltage to the source terminal of the pull-up transistor; global word lines each of which connects a plurality of sectors in the horizontal direction and supplies the second voltage to the gate terminal of the pull-up transistor; a second decoder that selects and drives a global word line; and a third decoder that selects and drives a vertical word line. The size of the transistor of a word line driver can be reduced.