发明名称 Vapor deposited film by plasma CVD method
摘要 <p>A vapor deposited film is formed on a base material surface by a plasma CVD method wherein an organic metal compound and an oxidizing gas are used as a reactive gas. The vapor deposited film has three sections of a base material side adhesive layer having 5% or more carbon, a barrier intermediate layer having less than 5% carbon, and a surface protection film having 5% or more carbon, by element concentration with respect to the total amount of three elements of a metal element (M), oxygen (O) and carbon (C) derived from the organic metal compound. The vapor deposited film has excellent adhesiveness to the base material, and has excellent resistance to water, especially to alkaline aqueous solutions, as well.</p>
申请公布号 AU2006216352(A1) 申请公布日期 2006.08.31
申请号 AU20060216352 申请日期 2006.02.07
申请人 TOYO SEIKAN KAISHA, LTD. 发明人 MEGUMI NAKAYAMA;RYUTA NAKANO;SATORU KITOU;HAJIME INAGAKI;TOSHIHIDE IEKI
分类号 C23C16/44;B65D1/00;B65D23/02;C23C16/40;C23C16/50 主分类号 C23C16/44
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