| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask for extreme ultraviolet ray exposure improved in defect inspection performance by DUV exposure and prevented in position deviation from occurring when drawing electron beams, to provide a mask blank for the mask, and to provide an exposure method using such a mask. <P>SOLUTION: The mask blank for extreme ultraviolet ray exposure comprises a high-reflection section made of a multilayered film formed on a substrate, and a low-reflection layer made of an absorption film formed on the multilayered film. In the mask blank, the absorption film is made of a thin film comprising at least two layers. In the thin film on the uppermost layer, an exhaustion coefficient to an ultraviolet ray having a wavelength of 150-300 nm ranges from 0 to 1.2 and sheet resistance is 50 MΩ/square or smaller. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
