发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To obtain a structure wherein a hollow portion is formed between a translucent member and an active element on a semiconductor substrate, without applying heavy load and conducting a pattern alignment at the jointing of the translucent member and the semiconductor substrate. <P>SOLUTION: In the semiconductor device 1, a spacer layer 17 is formed around an imaging element 12 on the semiconductor substrate 11, and a glass lid 15 is bonded to the spacer layer 17 via an adhesive layer 18. Thus, a space 16 is formed at a site, where the imaging element 12 is to be placed between the semiconductor substrate 11 and the glass lid 15. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006228837(A) 申请公布日期 2006.08.31
申请号 JP20050038395 申请日期 2005.02.15
申请人 SHARP CORP 发明人 ONO ATSUSHI
分类号 H01L27/14;H04N5/335;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L27/14
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