| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving reliability, and its manufacturing method. SOLUTION: The manufacturing method of the semiconductor device includes a step of forming a ferroelectric capacitor C; a step of forming an insulation film 35-2 on the ferroelectric capacitor; a step of forming a first barrier metal 51 on the insulation film; a step of forming a contact hole 53-1 to the ferroelectric capacitor through the first barrier metal and the insulation film, a step of forming a second barrier metal 54 on the first barrier metal, a sidewall of the contact hole, and the exposed capacitor; and a step of forming tungsten 43 on the second barrier metal and burying the tungsten 43 in the contact hole. COPYRIGHT: (C)2006,JPO&NCIPI
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