发明名称 Crystalline-si-layer-bearing substrate and its production method, and crystalline si device
摘要 A method for producing a substrate having a crystalline Si layer comprising the steps of forming an amorphous Si layer on a plastic substrate, and irradiating the amorphous Si layer with a laser beam to crystallize the amorphous Si, wherein the plastic substrate has light transmittance of 30 to 100% at an oscillation wavelength of the laser beam.
申请公布号 US2006194419(A1) 申请公布日期 2006.08.31
申请号 US20050552513 申请日期 2005.10.06
申请人 ARAKI YASUSHI 发明人 ARAKI YASUSHI
分类号 H01L21/20;C23C16/24;C23C16/56;H01L21/336;H01L29/786 主分类号 H01L21/20
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