| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of decrease in the margin in a wiring pattern from a minute pitch region to a peripheral loose pitch region and to improve pattern accuracy even when dipole illumination or quadrupole illumination is used. <P>SOLUTION: A photomask is provided which is used for projection exposure by illumination with the intensity in a light source condensed into a dipole or quadrupole pattern. When directions of lines diagonally connecting the gravity centers of the dipole or quadrupole illumination are defined as an X direction or a Y direction, a pattern with the minimum pitch in the mask pattern is formed parallel or perpendicular to the X or Y direction, and among patterns or pattern groups of pitches larger than the pattern with the minimum pitch, a pattern or a pattern group classified into a smaller exposure margin than the pattern of the minimum pitch is formed in a direction at 45° or 135° with respect to the pattern of the minimum pitch. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
