Semiconductor device and method of fabricating the same

摘要

A semiconductor device has an element isolating region formed of an insulating film having etching rates different from each other in a side close to an inside wall and a center side of a trench formed on a semiconductor substrate, and a selective epitaxial layer formed in both sides of the element isolating region, wherein the element isolating region has a tip portion in a tapered shape or a stepwise shape of which a width becomes narrower at a side closer to the tip portion.