摘要 |
<p>A method for electrolessly filling a stacked memory cell interconnect feature comprising electroless deposition from a composition comprising Co ions and a reducing agent by bottom-up filling initiated by reduction to Co metal on an electrically conducting bottom of the feature. An electroless deposition composition for electrolessly depositing Co in a high aspect ratio stacked memory cell interconnect feature, the composition comprising water, Co ions, a complexing agent, a buffering agent, a borane-based reducing agent component, and a hypophosphite reducing agent component. There is a concentration ratio of borane-based reducing agent to hypophosphite reducing agent of less than about 0.5.</p> |
申请人 |
ENTHONE INC.;CHEN, QINGYUN;HURTUBISE, RICHARD;WITT, CHRISTIAN;ABYS, JOSEPH, A.;STRITCH, DANIEL;VALVERDE, CHARLES |
发明人 |
CHEN, QINGYUN;HURTUBISE, RICHARD;WITT, CHRISTIAN;ABYS, JOSEPH, A.;STRITCH, DANIEL;VALVERDE, CHARLES |