发明名称 CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS
摘要 <p>A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. Each zone can optionally have a dedicated flow controller. Thus, flow through each zone can be individually controllable.</p>
申请公布号 WO2006091448(A2) 申请公布日期 2006.08.31
申请号 WO2006US05330 申请日期 2006.02.15
申请人 ELITE OPTOELECTRONICS, INC.;LIU, HENG 发明人 LIU, HENG
分类号 C23C16/00;C23C16/44;C23C16/455;C23C16/458;C30B25/14;C30B29/40 主分类号 C23C16/00
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