| 发明名称 |
DEPOSITION OF RUTHENIUM AND/OR RUTHENIUM OXIDE FILMS |
| 摘要 |
A method for depositing ruthenium oxide films in the formation of semiconductor devices. More specifically, the present invention provides a method for depositing ruthenium containing metal and metal-oxygen based films on the surface of a substrate (112) in a system (100) which comprises a process chamber (102) which houses a wafer support (110) and a gas injector (114).
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| 申请公布号 |
WO2006028573(A3) |
申请公布日期 |
2006.08.31 |
| 申请号 |
WO2005US24553 |
申请日期 |
2005.07.11 |
| 申请人 |
AVIZA TECHNOLOGY, INC.;SENZAKI, YOSHIHIDE |
发明人 |
SENZAKI, YOSHIHIDE |
| 分类号 |
C23C16/40;H01L21/443 |
主分类号 |
C23C16/40 |
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