| 摘要 |
PROBLEM TO BE SOLVED: To provide a new structure concerned with auxiliary capacity of a pixel. SOLUTION: The structure has a substrate with an insulating surface, a crystalline silicon film formed on the substrate with the insulating surface, a gate insulating film formed on the crystalline silicon film, a gate electrode formed on the gate insulating film, a drain electrode formed on the gate electrode across an inter-layer insulating film, a dielectric formed on the drain electrode, and a conductive film formed on the dielectric, the drain electrode being formed covering≥50% of the area of the crystalline silicon film to form a capacitor, including the conductive film and drain electrode as electrodes, with the dielectric. COPYRIGHT: (C)2006,JPO&NCIPI |
