| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a configuration for electrically connecting aluminum wire layers by a tungsten plug wherein a barrier metal layer is formed on the whole inner face of a through-hole, and the tungsten plug and the aluminum wire layers are electrically connected with high reliability and a low contact resistance. SOLUTION: The barrier metal layer configured with a 2-layer structure comprising a titanium film 10 and a titanium nitride film 11 is formed to the inner face of the through-hole 9. The titanium film 10 and the titanium nitride film 11 are also formed on the principal face of an interlayer insulation film 7. A film forming device is used to attain high directivity sputtering using a titanium target for forming the barrier metal layer, and includes a substrate bias mechanism for applying a high frequency voltage as a bias voltage to a semiconductor substrate to allow the semiconductor substrate to attract sputter particles from the titanium target, thereby allowing the titanium nitride film 11 to include an amorphous metallic film. COPYRIGHT: (C)2006,JPO&NCIPI |
