SOI SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an SOI semiconductor device wherein a kink effect is suppressed and a cost concerning a design is cheap, and to provide a method of manufacturing the SOI semiconductor device. SOLUTION: An SOI-MOSFET device 1 is provided with a gate electrode 9 formed through a gate insulating film 8 on a silicon thin film of an SOI substrate consisting of a support substrate 2, a buried oxide film 3 formed on the support substrate 2, and the silicon thin film formed on the buried oxide film 3; a channel region 7 located under the gate electrode 9 in the silicon thin film; a pair of n+diffusion areas 6 formed on the silicon thin film so as to pinch the channel region 7; and a p+diffusion area 14 which has the same conductive type as the channel region 7 and adjoins one of a pair of the n+diffusion areas 6 in the silicon thin film, and is formed in a region contacted with the channel region 7. Moreover, there is provided an insulating region 13 in a region which parts the channel region 7 in the gate widthwise direction. An electric charge built up in the channel region 7 is drawn out from a contact 10 through the p+diffusion area 14. COPYRIGHT: (C)2006,JPO&NCIPI