| 摘要 |
A photoresist in a semiconductor device with copper wiring is effectively removed at a low temperature of 25° C. using a photoresist removing apparatus that includes a vacuum chamber, a plasma generator located in the upper side of the chamber, and a wafer chuck that is insulated at all but a wafer-contacting surface, that is applied with an RF bias power, and that is located in the lower side of the chamber.
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