| 发明名称 |
Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask |
| 摘要 |
An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about -70° to about +70°. |
| 申请公布号 |
US2006128054(A1) |
申请公布日期 |
2006.06.15 |
| 申请号 |
US20050300761 |
申请日期 |
2005.12.14 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JONG-AN;HAN JI-HAENG;JUNG YOUNG-BAE;JUNG BAE-HYOUN |
| 分类号 |
H01L21/00;G03F1/28;G03F1/54;H01L21/336;H01L29/786 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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