| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively form a semiconductor layer on an insulator while the confinement of the width of a semiconductor layer which can be formed on the insulator is alleviated. SOLUTION: The semiconductor layer 3 is formed in the epitaxial growth on aγ-aluminum oxide layer 2, after a support 5 is provided in the side wall of a groove 6 formed on the semiconductor substrate 1, a groove 8 into which the semiconductor layer 3 is exposed is formed, a cavity 9 is formed between the semiconductor substrate 1 and the semiconductor layer 3 by bringing etching gas or etchant into contact with theγ-aluminum oxide layer 2, the semiconductor substrate 1, the semiconductor layer 3 and the support 5 are thermally oxidized, thereby forming an oxide film 10 to the cavity 9 between the semiconductor substrate 1 and the semiconductor layer 3. COPYRIGHT: (C)2006,JPO&NCIPI
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